Zero-bias peak in InSb nanowires

ORAL

Abstract

Zero-bias conductance peaks(ZBP) in InSb nanowires has been reported as a strong signature of Majorana bound states in semiconductors. We made similar superconductor-InSb nanowire-normal contact hybrid devices with NbTiN on bottom gates and found some features that may corresponding to Majorana bound states. By setting a barrier and tuning gates under the nanowire that are in proximity of superconductors, ZBPs appear at finite magnetic field and usually persist for several hundred miliTesla. In different devices, ZBPs appear at different magnetic field, which may result from different chemical potentials. To achieve a so-called hard induced gap and cleaner devices, we are trying various contact materials and etching methods.

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Authors

  • Peng Yu

    Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

  • Jun Chen

    Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA, University of Pittsburgh, Pittsburgh, PA, 15260, USA

  • Mo\"Ira Hocevar

    Institut N\'eel CNRS, Grenoble, France

  • S. R. Plissard

    CNRS, LAAS, Toulouse, France, Eindhoven University of Technology, 5612 MB Eindhoven, The Netherlands

  • Diana Car

    Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

  • E. P. A. M. Bakkers

    Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands, Eindhoven University of Technology, 5612 MB Eindhoven, The Netherlands

  • Sergey Frolov

    Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA