Magnetocrystalline anisotropy ``space'' distribution over atoms from different first principles approaches

ORAL

Abstract

Interplays between bulk vs interface and electron hybridization vs stress contributing into the magnetocrystalline anisotropy are studied from first pronciples. Fe/MgO system is considered as example with variable Fe thickness. The effect of stress is modeled by consideration of a number of fixed in-plane lattice parameters with full relaxation in z-direction. Different approaches to calculate separate atom contributions into the total magnetocrystalline anisotropy are compared and controversies are discussed

Authors

  • Roman Chepulskyy

    New Memory Technology, Samsung Semiconductor R\&D Center, Samsung Electronics

  • Dmytro Apalkov

    New Memory Technology, Samsung Semiconductor R\&D Center, Samsung Electronics