Tuning Charge and Correlation Effects for a Single Molecule on a Graphene Device

ORAL

Abstract

Controlling electronic devices down to the single molecule level is a grand challenge of nanotechnology. Single-molecules have been integrated into devices capable of tuning electronic response, but a drawback for these systems is that their microscopic structure remains unknown due to inability to image molecules in the junction region. Here we present a combined STM and nc-AFM study demonstrating gate-tunable control of the charge state of individual F4TCNQ molecules at the surface of a graphene field effect transistor. This is different from previous studies in that the Fermi level of the substrate was continuously tuned across the molecular orbital energy level. Using STS we have determined the resulting energy level evolution of the LUMO, its associated vibronic modes, and the graphene Dirac point (ED). We show that the energy difference between ED and the LUMO increases as EF is moved away from ED due to electron-electron interactions that renormalize the molecular quasiparticle energy. This is attributed to gate-tunable image-charge screening in graphene and corroborated by ab initio calculations.

Authors

  • Hsin-Zon Tsai

    UCB Physics

  • Sebastian Wickenburg

    UCB Physics and LBNL MSD

  • Jiong Lu

    UCB Physics, NUS Chemistry, NUS GRC

  • Johannes Lischner

    UCB Physics, LBNL MSD

  • Arash A. Omrani

    UCB Physics

  • Alexander Riss

    UCB Physics

  • Christoph Karrasch

    UCB Physics

  • Han Sae Jung

    UCB Physics

  • Ramin Khajeh

    UCB Physics

  • Dillon Wong

    UCB Physics

  • Kenji Watanabe

    National Institute of Materials Science, NIMS Japan

  • Takashi Taniguchi

    National Institute of Materials Science, NIMS Japan

  • Alex Zettl

    Dept. of Physics Univ. of California Berkeley, Lawrence Berkeley National Laboratory, Univ of California - Berkeley;Materials Sciences Division, LBNL;Kavli Energy NanoSciences Institute at the Univ of California, Berkeley and LBNL, UC Berkeley/Kavli ENSI/LBNL, University of California at Berkeley, Lawrence Berkeley National Laboratory; Univ of California, Berkeley, UCB Physics, LBNL MSD, and Kavli ENSI

  • Steven G. Louie

    University of California at Berkeley and Lawrence Berkeley National Lab, Physics Department, UC Berkeley and Lawrence Berkeley National Lab, University of California at Berkeley, University of California, Berkeley, University of California at Berkeley and Lawrence Berkeley National Laboratory, UC Berkeley and LBNL, UCB Physics and LBNL MSD

  • Michael F. Crommie

    Univ of California - Berkeley, UC Berkeley/Kavli ENSI/LBNL, University of California, Berkeley, UCB Physics, LBNL MSD, and Kavli ENSI