Gate-defined quantum dot devices in undoped Si/SiGe heterostructures for spin qubit applications

Spin qubits based on few electron quantum dots in semiconductor heterostructures are among the most promising systems for realizing quantum computation. Due to its low concentration of nuclear-spin-carrying isotopes, silicon is of special interest as a host material. We characterize gate-defined double and triple quantum dot devices fabricated from undoped Si/Si$_{0.7}$Ge$_{0.3}$ heterostructures. Our device architecture is based on integrating all accumulation and depletion mode gates in a single gate layer. This allows us to omit the commonly used global accumulation gate in order to achieve a more local control of the potential landscape in the device. We present our recent progress towards implementing spin qubits in these structures.