Calculating Effect of Point Defects on Optical Absorption Spectra of III-V Semiconductor Superlattices Based on (8x8) k-dot-p Band Structures

ORAL

Abstract

For a superlattice which is composed of layered zinc-blende structure III-V semiconductor materials, its realistic anisotropic band structures around the Gamma-point are calculated by using the (8x8)k-dot-p method with the inclusion of the self-consistent Hartree potential and the spin-orbit coupling. By including the many-body screening effect, the obtained band structures are further employed to calculate the optical absorption coefficient which is associated with the interband electron transitions. As a result of a reduced quasiparticle lifetime due to scattering with point defects in the system, the self-consistent vertex correction to the optical response function is also calculated with the help of the second-order Born approximation.

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Authors

  • Danhong Huang

    • Air Force Rsch Lab-Kirtland

  • Andrii Iurov

    • Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106
    • Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA
    • University of New Mexico

  • Godfrey Gumbs

    • Hunter College of the City University of New York, NY
    • Department of Physics and Astronomy, Hunter College, CUNY, New York, NY 10065
    • Hunter College of City University of New York, 695 Park Avenue, New York, NY 10065, USA
    • Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, NY 10065
    • Hunter College of the City University of New York

  • David Cardimona

    • Air Force Rsch Lab-Kirtland

  • Sanjay Krishna

    • University of New Mexico