One-Dimensional Electrical Contact to Molybdenum Disulfide

Molybdenum disulfide (MoS$_{\mathrm{2}})$ is one of the promising two-dimensional materials for future application in nano electronics, which has high carrier mobility, very good stability under atmosphere, proper band gap, etc. However, its application to electronic switching devices is hindered by Fermi level pinning at metal-MoS$_{\mathrm{2}}$ interfaces. Here, we experimentally demonstrate one-dimensional electrical contact to MoS$_{\mathrm{2\thinspace }}$formed via controllable plasma etching. We fabricated Al/MoS$_{\mathrm{2\thinspace }}$FET (n-type), Mo/MoS$_{\mathrm{2\thinspace }}$FET (n-type), and Pd/MoS$_{\mathrm{2}}$ FET (ambipolar). For Mo/MoS$_{\mathrm{2}}$ FET (n-type), on/off current ratio is around 10$^{\mathrm{8}}$ and mobility is around 104 cm$^{\mathrm{2}}$/(Vs). By contrast, for Pd/MoS$_{\mathrm{2}}$ FET (ambipolar), on/off current ratio is around 10$^{\mathrm{8}}$, hole mobility is ranged from 350 to 650 cm$^{\mathrm{2}}$/(Vs), and the mean free path of holes at 9K is around 23 nm. All the measured mobilities are evaluated by using two-terminal field-effect configuration. We can also achieve complementary logic gates with intrinsic MoS$_{\mathrm{2}}$/metal one-dimensional electrical contact.