Mechanisms for Long Carrier Lifetimes and High Detectivities from Novel Ga-free Narrow Gap III-V Semiconductor Superlattices
INVITED · E12
Presentations
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Ga-free InAs/InAsSb type-II superlattice and its applications to IR lasers and photodetectors
COFFEE_KLATCH · Invited
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Authors
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Yong-Hang Zhang
Arizona State University
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Field confinement using metasurfaces for increased-efficiency III-V infrared detectors
Invited
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Authors
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Masao Doi
Stanford University, LLBL, Hohai University, National High Magnetic Field Laboratory, Los Alamos National Laboratory, United States Department of Energy, APS, Syracuse University, University of Pittsburgh, NIST, Johns Hopkins University, Pennsylvania State University, Northwestern University, Nicolaou, Brandeis University, Sandia National Laboratories, Nagoya University
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Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
COFFEE_KLATCH · Invited
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Authors
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Thomas Boggess
University of Iowa, The University of Iowa
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Design of MWIR Type-II Superlattices for Infrared Photon Detectors
COFFEE_KLATCH · Invited
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Authors
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Christoph Grein
University of Illinois at Chicago
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Identification of Defect Candidates and their Effects on Carrier Lifetimes and Dark Currents in InAs/InAsSb Strained-Layer Superlattices for Infrared Detectors
COFFEE_KLATCH · Invited
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Authors
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Nicholas Kioussis
Department of Physics, California State University Northridge, California State University, Northridge, Department of Physics and Astronomy, California State University, Northridge, Physics Department, Cal State Univ - Northridge
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