High Pressure XANES studies on Mn dopeHigh Pressure XANES studies on Mn doped Bi2Te3

Bi$_{\mathrm{2}}$Te$_{\mathrm{3}}$, Bi$_{\mathrm{2}}$Se$_{\mathrm{3}}$, and Sb$_{\mathrm{2}}$Te$_{\mathrm{3}}$~are narrow band-gap semiconductors have been extensively studied along with their alloys due to their promising technological applications as thermoelectric materials. More recently pressure induced superconductivity and structural transition have been observed in these materials around 7 GPa [1,2]. ~Here we have performed high pressure x-ray near edge spectroscopy (XANES) measurements at Bi L-III edge on Mn (0.1) doped Bi$_{\mathrm{2}}$Te$_{\mathrm{3}}$ samples to understand the variation of the Bi valence across the pressure induced superconductivity regime. We have inferred notable changes in the Bi valence at high pressure conditions. The results will be discussed in detail. Work at the University of Nevada Las Vegas (ALC) is funded by U.S. Department of Energy Award DE-SC0001928. Portions of this work were performed at HPCAT (Sector 16), Advanced Photon Source (APS), Argonne National Laboratory. HPCAT is supported by DOE-BES, DOE-NNSA, NSF, and the W.M. Keck Foundation. APS is supported by DOE-BES, under Contract No. DE-AC02-06CH1135.