Microwave polarization angle study of the radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2D electron system under dc current bias
ORAL
Abstract
Microwave-induced magnetoresistance oscillations followed by the vanishing resistance states are a prime representation of non-equilibrium transport phenomena in two-dimensional electron systems (2DES). The effect of a dc current bias on the nonlinear response of 2DES with microwave polarization angle under magnetic field is a subject of interest. Here, we have studied the effect of various dc current bias on microwave radiation-induced magnetoresistance oscillations in a high mobility 2DES. Further, we systematically investigate the effect of the microwave polarization angle on the magneto-resistance oscillations at two different frequencies 152.78 GHz and 185.76 GHz. This study aims to better understand the effects of both dc current and microwave polarization angle in the GaAs/AlGaAs system, both of which modify the observed magneto-transport properties
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Authors
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Muhammad-Zahir Iqbal
Georgia State University, Atlanta, GA 30303
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H-C. Liu
Georgia State University, Atlanta, GA 30303, Georgia State University, Georgia State Univ
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M. S. Heimbeck
Army Aviation & Missile RD&E Center, Redstone Arsenal, Huntsville, AL 35898, Army Aviation \& Missile RD \& E Center, Redstone Arsenal, Huntsville, AL 35898
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Henry O. Everitt
Army Aviation & Missile RD&E Center, Redstone Arsenal, Huntsville, AL 35898 and Dept. of Physics, Duke University, Durham, NC 27708
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Werner Wegscheider
ETH Zurich, Switzerland, ETH Zurich, ETH-Zurich, 8093 Zurich, Switzerland
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Ramesh G. Mani
Georgia State University, Atlanta, GA 30303, Georgia State University