Dopants and Defects in Semiconductors: Nitrides

Presentations

• Point and Extended Defects in GaN-based Materials

  COFFEE_KLATCH · Invited

  March 16, 2016, 8:00 AM – March 16, 2016, 8:36 AM

  Authors

  • James S. Speck

    UCSB Materials Department, Materials Department, University of California, Santa Barbara

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• Impact of defects on efficiency of nitride devices

  COFFEE_KLATCH · Invited

  March 16, 2016, 8:36 AM – March 16, 2016, 9:12 AM

  Authors

  • Chris G. Van de Walle

    University of California, Santa Barbara, Univ of California - Santa Barbara, Materials Department, University of California, Santa Barbara, Materials Department, UC Santa Barbara, UCSB, University of California Santa Barbara

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• Saturation Behavior of Eu ion emission in GaN

  ORAL

  March 16, 2016, 9:12 AM – March 16, 2016, 9:24 AM

  Authors

  • Natalie Hernandez

    Lehigh University

  • Brandon Mitchell

    University of Mount Union, Department of Physics and Astronomy, University of Mt. Union

  • Yasufumi Fujiwara

    Osaka University

  • Volkmar Dierolf

    Lehigh University, Department of Physics, Lehigh University

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• Hydrogen-carbon complexes and the blue luminescence band in GaN.

  ORAL

  March 16, 2016, 9:24 AM – March 16, 2016, 9:36 AM

  Authors

  • Denis Demchenko

    None, Virginia Commonwealth Univ

  • Ibrahima Diallo

    Virginia Commonwealth University

  • Michael Reshchikov

    Virginia Commonwealth University

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• Impact of point defects on III-nitride tunnel devices.

  ORAL

  March 16, 2016, 9:36 AM – March 16, 2016, 9:48 AM

  Authors

  • Darshana Wickramaratne

    Materials Department, UC Santa Barbara

  • John L. Lyons

    Center for Functional Nanomaterials, Brookhaven National Laboratory, University of California Santa Barbara

  • Chris G. Van de Walle

    University of California, Santa Barbara, Univ of California - Santa Barbara, Materials Department, University of California, Santa Barbara, Materials Department, UC Santa Barbara, UCSB, University of California Santa Barbara

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• Density Functional Theory Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors

  ORAL

  March 16, 2016, 9:48 AM – March 16, 2016, 10:00 AM

  Authors

  • N. A. Modine

    Sandia National Laboratories

  • A. F. Wright

    Sandia National Laboratories

  • S. R. Lee

    Sandia National Laboratories

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• First-principles identification of optically active Er$^{3+}$ centers in GaN

  ORAL

  March 16, 2016, 10:00 AM – March 16, 2016, 10:12 AM

  Authors

  • Khang Hoang

    North Dakota State University

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• Native defects in GaN: a hybrid functional study

  ORAL

  March 16, 2016, 10:12 AM – March 16, 2016, 10:24 AM

  Authors

  • Ibrahima Castillo Diallo

    None

  • Denis Demchenko

    None, Virginia Commonwealth Univ

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• Native point defects and doping in ZnGeN$_2$

  ORAL

  March 16, 2016, 10:24 AM – March 16, 2016, 10:36 AM

  Authors

  • Dmitry Skachkov

    Case Western Reserve University

  • Walter Lambrecht

    Case Western Reserve University

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• Fluorescent Defects in Hexagonal Boron Nitride

  ORAL

  March 16, 2016, 10:36 AM – March 16, 2016, 10:48 AM

  Authors

  • Annemarie L. Exarhos

    University of Pennsylvania

  • Kameron Oser

    University of Pennsylvania

  • David A. Hopper

    University of Pennsylvania

  • Richard R. Grote

    University of Pennsylvania

  • Lee C. Bassett

    University of Pennsylvania

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• Unique stability of neutral interstitial hydrogen in cubic BN and diamond

  ORAL

  March 16, 2016, 10:48 AM – March 16, 2016, 11:00 AM

  Authors

  • John L. Lyons

    Center for Functional Nanomaterials, Brookhaven National Laboratory, Brookhaven National Laboratory

  • Chris G. Van de Walle

    University of California, Santa Barbara, Univ of California - Santa Barbara, Materials Department, University of California, Santa Barbara, Materials Department, UC Santa Barbara, UCSB, University of California Santa Barbara

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