Synthesis and electronic structure of single-layer TaS$_{2}$

Bulk TaS$_{2}$ is an intriguing material that exhibits charge density wave phases, Mott physics, and superconductivity; however, little work has been done on single-layer (SL) TaS$_{2}$. Progress in this area demands a method for controllably fabricating high-quality, uniform samples with low defect densities. We have succeeded in epitaxially growing SL TaS$_{2}$, using the Au(111) substrate. The monolayer exhibits a well-defined orientation with respect to the substrate, a strong preference toward forming triangular islands, and a moire superstructure. Furthermore, long deposition times lead to smooth layer-by-layer growth of TaS$_{2}$. In this talk, I will present band structure measurements acquired by angle-resolved photoemission spectroscopy (ARPES) on TaS$_{2}$/Au samples fabricated in situ at the SGM3 end station of the ASTRID2 synchrotron facility in Denmark. Scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) elucidate the material's structural properties and interaction with the substrate.