Silicon quantum dots with counted antimony donor implants
ORAL
Abstract
Antimony donor implants next to silicon quantum dots have been detected with integrated solid-state diode detectors with single ion precision. Devices with counted number of donors have been fabricated and low temperature transport measurements have been performed. Charge offsets, indicative of donor ionization and coupling to the quantum dot, have been detected in these devices. The number of offsets corresponds to 10-50{\%} of the number of donors counted. We will report on tunneling time measurements and spin readout measurements on the donor offsets. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.
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Authors
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Meenakshi Singh
Sandia National Laboratory
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Jose Pacheco
Sandia National Laboratory
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Daniel Perry
Sandia National Laboratory
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Joel Wendt
Sandia National Laboratories, Sandia National Laboratory
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Ronald Manginell
Sandia National Laboratory
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Jason Dominguez
Sandia National Laboratory
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Tammy Pluym
Sandia National Laboratories, Sandia National Laboratory
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Dwight Luhman
Sandia National Laboratory
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Edward Bielejec
Sandia National Laboratories, Sandia National Laboratory
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Mike Lilly
Sandia National Labs, Sandia National Laboratories, Sandia National Laboratory
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Malcolm Carroll
Sandia National Laboratories, Sandia National Labs, Sandia National Laboratory