Silicon quantum dots with counted antimony donor implants

ORAL

Abstract

Antimony donor implants next to silicon quantum dots have been detected with integrated solid-state diode detectors with single ion precision. Devices with counted number of donors have been fabricated and low temperature transport measurements have been performed. Charge offsets, indicative of donor ionization and coupling to the quantum dot, have been detected in these devices. The number of offsets corresponds to 10-50{\%} of the number of donors counted. We will report on tunneling time measurements and spin readout measurements on the donor offsets. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Authors

  • Meenakshi Singh

    Sandia National Laboratory

  • Jose Pacheco

    Sandia National Laboratory

  • Daniel Perry

    Sandia National Laboratory

  • Joel Wendt

    Sandia National Laboratories, Sandia National Laboratory

  • Ronald Manginell

    Sandia National Laboratory

  • Jason Dominguez

    Sandia National Laboratory

  • Tammy Pluym

    Sandia National Laboratories, Sandia National Laboratory

  • Dwight Luhman

    Sandia National Laboratory

  • Edward Bielejec

    Sandia National Laboratories, Sandia National Laboratory

  • Mike Lilly

    Sandia National Labs, Sandia National Laboratories, Sandia National Laboratory

  • Malcolm Carroll

    Sandia National Laboratories, Sandia National Labs, Sandia National Laboratory