Dielectric and structural properties of Hf$_{1-x}$Zr$_{x}$O$_{2}$ thin film grown by pulsed laser deposition for ferroelectric oxide

Concerning ferroelectricity embedded in CMOS technology, research attention has been paid to the potential application of HfO$_{2}$ as a non-perovskite ferroelectric material. So far, HfO$_{2}$ has been considered as an alternative for the standard gate dielectric. Recently, HfO$_{2}$ demonstrated latent ferroelectricity with the typical capacitance-voltage hysteresis. In addition, the doped HfO$_{2}$ exhibited ferroelectric as well as antiferroelectric behavior. Both ferroelectric and antiferroelectric behavior of Hf$_{1-x}$Zr$_{x}$O$_{2}$ can be used as the memory device and energy harvest materials respectively. The ferroelectric behavior was observed in Hf$_{1-x}$Zr$_{x}$O$_{2}$ thin film on TiN electrode. On the other hand, it was reported that the ferroelectric behavior disappeared on Pt electrode because of its isotropic stain. In this presentation, we present the bottom electrode crystallinity dependence of ferroelectricity in Hf$_{1-x}$Zr$_{x}$O$_{2}$ thin films. We deposited Hf$_{1-x}$Zr$_{x}$O$_{2}$ on three distinct bottom electrodes, Pt(111), Pt(poly-crystalline) and ITO(111) to check strain induced ferroelectricity. Dielectric and structural properties of the Hf$_{1-x}$Zr$_{x}$O$_{2}$ thin films were investigated by P-E measurement and XRD.