Emergence of topological quantum effects in thin film topological insulators through defect engineering

ORAL

Abstract

Topological insulators (TIs) have received intense attention over the past several years with the hope of new age of topological electronics or topotronics. However, defects, particularly interfacial defects, have been a major bottleneck along the way. In this talk, I will discuss how defects have been affecting the properties of thin film TIs and show how defect-engineered TI thin films can reveal heretofore unobservable aspects of TIs such as topological surface-state quantum Hall effect, (quantum) anomalous Hall effect, quantized Faraday and Kerr rotation, and finite-size topological phase transition, etc.

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Authors

  • Maryam Salehi

    Rutgers University, Department of Materials Science & Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, U.S.A.

  • Nikesh Koirala

    MIT, Rutgers University, Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, U.S.A.

  • Matthew J. Brahlek

    Penn State University, Rutgers University

  • Jisoo Moon

    Rutgers University, Rutgers University-New Brunswick

  • Seongshik Oh

    Rutgers University, Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, U.S.A.