Study the growth of Pb-doped BiFeO$_{\mathrm{3}}$ and strain-relaxed SrRuO$_{\mathrm{3}}$ bottom layer on SrTiO$_{\mathrm{3}}$ (111) substrate.

Magnetoelectric multiferroics possess inherent coupling between magnetic and ferroelectric order parameters, which can be used as an indirect medium to switch magnetic moment of adjacent magnetic layer by changing the polarity of the electric field and vice-versa. To date, BiFeO$_{\mathrm{3}}$ is the only magnetoelectric multiferroic material which shows ferroelectric (T$_{\mathrm{C\thinspace }}$\textasciitilde 1103K) and antiferromagnetic ordering temperature (T$_{\mathrm{N\thinspace }}$\textasciitilde 643K) above room temperature. In our research, we are trying to find out a better growth condition for Pb-doped BiFeO$_{\mathrm{3}}$ and SrRuO$_{\mathrm{3}}$ film on atomically flat SrTiO$_{\mathrm{3}}$ (111) substrates. The polarization of Pb-doped BFO can easily be switched along out of plane direction by electric field. We observed no electric leakage at the domain walls of Pb-doped BFO which is a very distinct feature in this system.