Undoped strained germanium quantum wells towards spin qubits

Germanium is emerging as a promising material to implement spin qubits because of the key properties of high carrier mobility, strong spin-orbit coupling, long spin coherence times and compatibility with silicon technology. We report the deposition of undoped strained Ge/SiGe quantum wells of high structural quality in a reduced pressure chemical vapor deposition tool. Structural analysis of the Ge/SiGe heterostructures confirm sharp interfaces, full relaxation of the virtual substrate, and coherent deposition of the strained quantum well. Furthermore, we will discuss architectures towards the development of CMOS compatible spin qubits in laterally defined Ge quantum dots.