Field effect study of QHE in low carrier density films of Bi2Se3

ORAL

Abstract

The novel quantum Hall effect (QHE) arising from topological surface states (TSS) of TIs have been difficult to observe in binary chalcogenide compounds such as Bi2Se3 due to high level of doping in these materials. By growing Bi2Se3 thin films with low starting carrier density, we have not only observed ambipolar transport but also the 1/2 quantized QHE (per surface) associated with Dirac dispersion of the TSSs as indicated by (inverse) odd integered nature of Hall resistance. Furthermore, we will also discuss how QHE signature varies as a function of gate voltage.

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Authors

  • Nikesh Koirala

    MIT, Rutgers University, Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, U.S.A.

  • Maryam Salehi

    Rutgers University, Department of Materials Science & Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, U.S.A.

  • Jisoo Moon

    Rutgers University, Rutgers University-New Brunswick

  • Seongshik Oh

    Rutgers University