Tunable Moir\'{e} Bands in Minimally Twisted Bilayer Graphene.

We present the realization of tunable moir\'{e} crystals in minimally twisted (MT) bilayer graphene, and provide a comprehensive study of electron transport in these samples. In twisted bilayer graphene, the relative rotation of the two graphene layers leads to the formation of a new moir\'{e} crystal, which is expected to have a dramatically different band structure compared to Bernal-stacked bilayer graphene. The MT bilayer graphene is fabricated using a new transfer method that employs a micromechanical hemispherical handle substrate which allows defining small relative rotation angles (0.6$^{\circ}$ to 1.2$^{\circ}$ ) between two graphene flakes that stem from the same domain, with an accuracy of 0.1$^{\circ}$ . We observe the emergence of satellite transport gaps at $\pm$ 8 electrons per moir\'{e} unit cell, along with a conductivity minimum at charge neutrality. These features remain robust in the presence of a high transverse electric field, applied using dual gated device structures. In magnetic fields, we observe the emergence of a Hofstadter butterfly in the energy spectrum, with four-fold degenerate Landau levels, and broken symmetry QHS at $\nu \quad =$ $\pm$ 1, $\pm$ 2, $\pm$ 3.