Trapping Centers at the Superfluid–Mott-insulator Criticality: Transition between Charge-quantized States
ORAL
Abstract
Under the conditions of superfluid--Mott-insulator criticality in two dimensions, the trapping centers---{\it i.e.,} local potential wells and bumps---are generically characterized by an integer charge corresponding to the number of trapped particles (if positive) or holes (if negative). Varying the strength of the center leads to a transition between two competing ground states with charges differing by $\pm 1$. The hallmark of the transition scenario is a splitting of the number density distortion, $\delta n(r)$, into a half-integer core and a large halo carrying the complementary charge of $\pm 1/2$. The sign of the halo changes across the transition and the radius of the halo, $r_0$, diverges on the approach to the critical strength of the center, $V=V_c$, by the law $r_0 \propto |V-V_c|^{-\tilde{\nu}}$, with $\tilde{\nu}\approx 2.33(5)$.
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Authors
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Kun Chen
University of Massachusetts at Amherst
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Yuan Huang
University of Massachusetts at Amherst
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Youjin Deng
University of Science and Technology of China, USTC Hefei, China
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Boris Svistunov
University of Massachusetts at Amherst, UMass, Amherst, US