Conductive Barrier Layers of TiN$_{\mathrm{x}}$ for Measurements of Silicon Films at High Temperature

Electrical measurements of Silicon-based thin films can be challenging at high temperatures due to silicide formation and inter-diffusion of silicon with metal leads. We examine thin sputtered titanium nitride (TiN$_{\mathrm{x}})$ films and demonstrate that by saturating the TiN$_{\mathrm{x}}$ with Nitrogen and using the proper deposition and annealing temperatures, a stable, conductive barrier is produced. Rutherford backscattering (RBS) is used to characterize the film density and composition, conductivity is measured up to 750 K. A sputtered platinum film is deposited on TiN$_{\mathrm{x}}$ to further test the effectiveness of the barrier versus a silicon substrate. These films show excellent stability and conductivity after repeated thermal cycling, making them ideal for high temperature electrical measurements of silicon-based thin films.