Fermi surface reconstruction of electron-doped La$_{\mathrm{\mathbf{2-x}}}$\textbf{Ce}$_{\mathrm{\mathbf{x}}}$\textbf{CuO}$_{\mathrm{\mathbf{4}}}$\textbf{ from transport experiments}

We report Hall Effect, Nernst Effect, and resistivity measurements on La$_{\mathrm{2-x}}$Ce$_{\mathrm{x}}$CuO$_{\mathrm{4}}$ (LCCO) thin films as a function of doping and temperature for magnetic fields up to 14T. A change in the sign of the low temperature Hall coefficient at 2K suggests that the Fermi surface reconstructs at a critical doping of Ce$=$ 0.14. This agrees with some prior high field Hall Effect measurements of the LCCO system [\textit{K. Jin, et al. PRB 78, 174521 (2008)}]. In addition, we find a large change in the carrier number at this doping, similar to that seen in PCCO films [\textit{Y. Dagan, et al. Phys. Rev. Lett.~92, 167001~(2004)}] and hole-doped cuprates [\textit{S. Badoux, et al. Nature }\textbf{\textit{531}}\textit{, 210-214 (2016)}]. The implications of these results for quantum critical behavior in the electron-doped cuprates will be discussed.