Molybdenum disulfide grown by gas-phase precursor hydrogen sulfide in MOCVD

In this work, we demonstrate molybdenum disulfide (MoS$_{\mathrm{2}})$ growth using a new gas-phase precursor hydrogen sulfide in a metal-organic chemical vapor deposition (MOCVD) system, where the flow rate and partial pressure of the gas-phase hydrogen sulfide can be precisely controlled and the gas precursors can be evenly distributed in the growth chamber. The Raman and photoluminescence spectra of the synthesized MOCVD MoS$_{\mathrm{2}}$ indicate that the film is monolayer. We also systematically investigate the impact of the growth conditions on the morphology of the MoS$_{\mathrm{2}}$ grown by CVD using solid sulfur powder and by MOCVD using hydrogen sulfide. In CVD MoS$_{\mathrm{2}}$, the grain size and the layer thickness of CVD MoS$_{\mathrm{2}}$ increase as the carrier gas flow rate and growth time increase. In MOCVD MoS$_{\mathrm{2}}$, the shapes of the MoS$_{\mathrm{2}}$ grains are highly influenced by the flow rate of the gas precursor and the chamber pressure. This work is the first demonstration of MOCVD MoS$_{\mathrm{2}}$ growth using hydrogen sulfide gas precursor. This new technique can lead to large-scale uniform growth of MoS$_{\mathrm{2}}$ and provide a solid material foundation for future nanoelectronics.