Evidence for Layered Quantized Transport in Topological Insulator ZrTe$_{\mathrm{5}}$

ZrTe$_{\mathrm{5}}$ is an important semiconductor thermoelectric material and a candidate topological insulator. Here we report observation of Shubnikov-de Hass oscillations accompanied by quantized Hall resistance in ZrTe$_{\mathrm{5}}$ crystal, and the mobility can achieve 41000 cm$^{\mathrm{2}}$V$^{\mathrm{-1}}$s$^{\mathrm{-1}}$. The angle-depended magnetoresistance demonstrates that the transport properties are 2D-like. We also founded that Hall conductance $G_{\mathrm{xy}}$ shows quantized step and each step is 1 $e^{\mathrm{2}}$/$h$ for single layer. We provide the Shubnikov-de Hass oscillations do not origin form the surface states, but come from the bulk. Each single layer ZrTe$_{\mathrm{5}}$ act like an independent 2D electron systems, and the bulk of the sample shows a multilayered quantum Hall effect. In addition to reveal the nature of Shubnikov-de Hass oscillations, we also provide a new point to explain the anomalous peak nature in temperature resistance, which have puzzled many years for the scientists.