Depin MoS$_{\mathrm{2}}$ Fermi Level via One-Dimensional Contact

In this work, we depin MoS$_{\mathrm{2}}$/metal contact using MoS$_{\mathrm{2}}$/metal one-dimensional (1D) contact via controllable plasma etching. An intrinsic MoS$_{\mathrm{2}}$/Pd 1D contact FET fabricated in this study shows ambipolar behavior. While an intrinsic MoS$_{\mathrm{2}}$/Mo 1D contact FET fabricated shows n-type behavior with a two-probe field-effect electron mobility of 96 cm$^{\mathrm{2}}$V$^{\mathrm{-1}}$s$^{\mathrm{-1}}$. With four-probe transport measurement, we obtain a maximum field-effect hole mobility, 9 cm$^{\mathrm{2}}$V$^{\mathrm{-1}}$s$^{\mathrm{-1}}$ at 300 K. At 70 k, it increases to around 393 cm$^{\mathrm{2}}$V$^{\mathrm{-1}}$s$^{\mathrm{-1}}$. With the use of this MoS$_{\mathrm{2}}$/metal 1D contact, we successfully demonstrate an inverter formed on intrinsic MoS$_{\mathrm{2}}$, whose gain is \textasciitilde 14.7 at V$_{\mathrm{SD}}=$5 V. Our work opens a door to simply realizing complementary integrated circuitry, based on high performance intrinsic MoS$_{\mathrm{2}}$.