Interfacial Exciton Dynamics in Atomically Thin Semiconductors

Dielectric confinement in atomically thin transition metal dichalcogenides (TMDs) leads to excitonic behavior that differs markedly from bulk semiconductors. Through time-resolved optical microscopy studies of exciton transport and interfacial energy transfer in monolayer MoS$_{\mathrm{2}}$ and WS$_{\mathrm{2}}$, I will demonstrate the dominant role of dielectric screening in exciton-exciton interactions in this system, and how this affects our understanding of interfacial dynamics in atomically thin semiconductors.