Current driven domain wall motion in ferrimagnetic Heusler thin racetracks
ORAL
Abstract
Heusler compounds are a large family of materials with a wide range of tunable properties. Of particular interest are ferrimagnetic binary Heusler compounds that have low magnetization and high perpendicular magnetic anisotropy in their tetragonally distorted forms. We have investigated a number of binary Mn based Heusler compounds and have prepared ultrathin films with thicknesses ranging from 1 to several unit cells. By forming racetracks from these materials we have demonstrated, for the first time, the current induced motion of domain walls with speeds up to 106 m/sec. We discuss the mechanisms by which the domain walls are moved with current which we find is surprisingly complex. Ferrimagnetic Heuslers are particularly interesting for spintronic applications because their low moment and high anisotropy allow for very narrow domain walls and, therefore, dense applications. We estimate the domain wall widths are of the order of a few unit cells.
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Authors
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Panagiotis Filippou
IBM Almaden Res Ctr
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Jaewoo Jeong
IBM Almaden Res Ctr
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See-Hun Yang
IBM Almaden Res Ctr, IBM Almaden Research Center, IBM Almaden
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Yari Ferrante
IBM Almaden Res Ctr
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Teya Topuria
IBM Almaden Res Ctr
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Mahesh Samant
IBM Almaden Res Ctr
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Stuart Parkin
IBM Almaden Res Ctr, MPI-Microstructure Physics, Halle