Electronic structure of Ba(Zn0.875Mn0.125)2As2

The electronic structure of single-crystalline Ba(Zn0.875Mn0.125)As2, the parent compound of the recently found high temperature ferromagnetic semiconductor-(Ba,K)(Zn,Mn)2As2, was studied by high-resolution angle-resolved photoemission spectroscopy. A flat band related to the 3d states of the doped Mn atoms was observed at the binding energy of ~-1.6eV besides the previously reported feature at about 3.3eV. The spectral weight of this feature is much stronger than that obtained from density functional theory calculations. We proposed that the large spectral weight could originate from the hybridization between Mn and As orbitals. The overall band dispersions agree well with the first-principles calculations of undoped BaZn2As2 except that the total bandwidth of the valence band is larger than that calculated. The increased bandwidth after Mn doping is compatible with the proposed theoretical model.