Radiation Hardness of Sol-Gel Derived Zinc Oxide Thin Film Transistors

ORAL

Abstract

Solution-derived bottom-gate zinc oxide thin film transistors (ZnO TFTs) with different number of spin-coated layers (4 layers and 8 layers) were successfully fabricated and exposed to gamma irradiation with a dosage as high as 2.2 MGy (220 MRad (air)). Zinc oxide layers were grown via sol-gel spin coating technique and were used as the active channel layer. The fabricated devices were characterized before and after being exposed to 1.2 MGy and 2.2 MGy gamma irradiation. The zinc oxide films were characterized by photoluminescence and device characteristics were extracted from the current-voltage measurements before and after irradiation. After 1.2 MGy gamma ray exposure, both 4-layer and 8-layer sample devices were functioning. Degradation in drain current ON/OFF ratio was observed for 4-layer devices while 8-layer devices exhibited an enhancement. The 8-layer ZnO TFTs remained functional after the 2.2 MGy exposure, while the 4-layer devices no longer functioned. Degradation/enhancement of device characteristics such as saturation mobility, drain current ON/OFF ratio and threshold voltage shift due to gamma ray exposure will be discussed.

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Presenters

  • Vahid Mirkhani

    Auburn University, Physics, Auburn University, Department of Physics, Auburn University

Authors

  • Vahid Mirkhani

    Auburn University, Physics, Auburn University, Department of Physics, Auburn University

  • Shiqiang Wang

    Auburn University, Department of Electrical and Computer Engineering , Auburn University, Electrical and Computer Engineering, Auburn University

  • Kosala Yapabandara

    Department of Physics, Auburn University, Physics, Auburn University

  • Muhammad Shehzad Sultan

    Physics, Auburn University

  • Min Khanal

    Auburn University, Department of Physics, Auburn University, Physics, Auburn University

  • Burcu Ozden

    Department of Physics and Astronomy, University of Pittsburgh, Physics, Auburn University

  • Sunil Uprety

    Department of Physics, Auburn University, Physics, Auburn University

  • Ayayi Ahyi

    Auburn University, Physics, Auburn University

  • Dong-Joo Kim

    Materials Research and Education Center, Auburn University

  • Sarit Dhar

    Department of Physics, Auburn University, Physics, Auburn University

  • Michael Hamilton

    Auburn University, Department of Electrical and Computer Engineering , Auburn University, Electrical and Computer Engineering , Auburn University, Electrical and Computer Engineering, Auburn University

  • Mobbassar Sk

    Qatar University, Center for Advanced Materials, Qatar University

  • Minseo Park

    Physics, Auburn University, Department of Physics, Auburn University