All-oxide NiO-Ga₂O₃ PN Junction Deposited at Room Temperature: Ga₂O₃ Thickness Effect on PN Junction Performance and Future Applications.

PN junctions are the base of any bipolar device, being used as solar cells, radiation detectors, UV detectors, JFETs, etc. However, the lack of a high performance p-type oxide semiconductor currently limits the oxide technology to mostly unipolar devices. We will discuss a semi-transparent all-oxide pn junction deposited at room temperature, which allows its integration in flexible electronics and in applications where transparency is required. Ga₂O₃ was selected as the n-type oxide due to its wide band gap and semiconductor behavior, for the pn junction use as UV detector and other future applications. Finally, the effect of the Ga₂O₃ layer thickness in the overall pn junction electrical performance will be evaluated.