Transport in topological insulator thin films with bulk-surface coupling: interference corrections and conductance fluctuations

Motivated by the experimental difficulty to produce topological insulators of the Bi2Se3 family with pure surface-state conduction, we study the effect that the bulk can have on the low-temperature transport properties of gated thin TI films. In this talk, I will mainly discuss conductance fluctuations in various parameter regimes. I will argue that combined measurements of conductance fluctuations and interference corrections, weak localization or weak anti-localization, can provide an improved understanding of the physics underlying the low-temperature transport processes in thin TI films with bulk-surface coupling.