ZnS/MoSx superlattices: growth and characterizations of physical properties

While layered compound of molybdenum disulfide (MoS₂) has re-emerged as a two-dimensional channel material of high carrier mobility for gated devices, its ultimate integration with the silicon technology would require good epitaxial quality and the path to maturity for this adoption is still at a beginning stage. Concept of superlattice heterojunction structures with other compound materials provide an additional route around the challenges. In this work, we had an attempt at ZnS/MoSx superlattices hoping to acquire different stoichiometry of the molybdenum sulfides in different configurations of molecular coordination so that stable crystal structures with desired electronic characteristics, high carrier mobility included, would be found. Atomic Layer Deposition (ALD) method was used for this purpose in the preliminary effort. The properties of the film studied with X-ray diffraction (XRD), X-ray reflection (XRR), grazing incident angle X-ray diffraction (GIXRD), transmission electron microscopy (TEM), and photoluminescence (PL) will be presented and their applications as a channel semiconductor in a device will also be discussed.