Electronic and vibrational properties of Ba3XN (X= Bi, and Sb): Atom intercalation influence on transport anisotropy
ORAL
Abstract
The electronic structure and lattice thermal conductivity (κ) of hexagonal anti-perovskite Ba3XN compounds are studied by employing first-principles density functional theory and Boltzmann transport calculations. For Ba3N we find significant intrinsic anisotropy (κc/κa ~ 7.5) in thermal conductivity, with the cross-plane direction having the higher conductivity. Interestingly, introducing Bi/Sb atoms (Ba3SbN/Ba3BiN) has little effect on the in-plane thermal conductivity (κa), however κc decreases significantly, reducing the anisotropy κc/κa ~ 3.5. The anisotropy in κ for these systems originates from different bonding along the crystallographic directions, specifically from relative weak bonding between the layers in the hexagonal plane, which leads to anisotropic phonon group velocities. These results will be discussed in terms of structural bonding, group velocities and phonon life times. In particular the unusual behavior of thermal conductivity for Bi/Sb compounds will be discussed.
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Presenters
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Tribhuwan Pandey
Materials Science and Technology Division, Oak Ridge National Laboratory
Authors
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Tribhuwan Pandey
Materials Science and Technology Division, Oak Ridge National Laboratory
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Lucas Lindsay
Materials Science & Technology Division, Oak Ridge National Lab, Oak Ridge National Lab, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge National Laboratory
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David Parker
Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge National Lab