Ambient hole doping of single-layer WS2 supported on SiO2 substrates

ORAL

Abstract

Understanding charge transfer (CT) between two-dimensional (2D) crystals and molecules is crucial for the fundamental research and future applications of 2D material systems. Despite recent surge on this research subject, however, the roles of the interface formed by supporting substrates and their surfaces have not been investigated. In particular, ambient water may form a medium on hydrophilic surfaces for electrochemical reactions with oxygen in the air. In this work, we investigated the CT interaction of single-layer WS2 with the proposed redox couple of O2/H2O serving as a hole dopant. Photoluminescence (PL) and Raman spectra, obtained for WS2/SiO2 in a gas-controlled optical cell, showed that hole doping is mediated by O2 and H2O. Much reduced CT on hexagonal boron nitride substrates suggested a conclusive role of interface between WS2 and hydrophilic SiO2 substrate. Wide-field PL imaging was exploited to investigate spatial inhomogeneity and anisotropy. We will further discuss detailed photophysics of charged excitons (trions) and possible roles of defects in the observed CT reactions.

Presenters

  • Haneul Kang

    Department of Chemistry, Pohang Univ of Sci & Tech, Department of chemistry, Pohang university of science and technology

Authors

  • Haneul Kang

    Department of Chemistry, Pohang Univ of Sci & Tech, Department of chemistry, Pohang university of science and technology

  • Sunmin Ryu

    Department of Chemistry & Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Department of Chemistry & Division of Advanced Materials Science, Pohang Univ of Sci & Tech, Department of chemistry & Division of advanced materials science, Pohang university of science and technology