LaInO₃ /BaSnO₃ Polar Interface on MgO Substrate

LaInO₃ (LIO)/La-doped BaSnO₃ (BLSO) interface shows two dimensional electron gas(2DEG)-like behavior with conductance enhancement of several orders of magnitude after growth of LIO layer on BLSO layer on STO substrates. [1] We investigated the LIO/BLSO interface on MgO substrates. For this experiment, we first confirmed the structure of interface on nonperovskite MgO substrates. Reciprocal Space Mapping result confirms well-formed LIO/BLSO interface. We measured electrical properties to see the effects of the substrate on the conducting interface. There was clear conductance enhancement after growth of LIO layer on the BLSO layer on MgO substrates. Especially we observed large conductance enhancement at LIO/BSO(undoped) interface. This result is different from the insulating property of such interface on STO substrates. Using this 2DEG-like interface with undoped BSO, we fabricated field effect devices. We will report on such FET performances on MgO substrates.
[1] U. Kim et al., APL Mat. 4, 071102 (2016).