Electrical spin injection/detection in Cobalt/MoS₂ hybrid systems.

We demonstrate for the first time the electrical spin injection and detection in a multilayer MoS₂ semiconducting channel [1]. A Magnetoresistance around 1 percent has been observed at low temperature through a 450 nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. it is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. The electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. Moreover, for in-plane injection, the electron spin relaxation is found to be greatly damped in a multilayer MoS₂ channel. Long spin diffusion length (≈235 nm) and large spin lifetime (≈46 ns) estimated from the measurements make these multilayer systems promising for spintronic applications. S.H. Liang et al., Nature Com. 8, 14947 (2017).