Gate-tunable THz emission at oxide interfaces via ultrafast spin-to-charge current conversion

ORAL

Abstract

Two-dimensional electron systems at oxide interfaces such as LaAlO3 / SrTiO3 provide promising platforms for achieving fast, tunable, and efficient spin-charge inter-conversion. Here, we report gate-tunable, ultrafast spin-to-charge current conversion in NiFe / LaAlO3 / SrTiO3, measured by THz emission spectroscopy. Upon ultrafast laser excitation, we found the sign of the emitted single-cycle THz pulses follows the direction of the magnetization in NiFe, and its magnitude decreases with increasing the thickness of the LaAlO3 layer. These findings support that the spin-charge conversion occurs at the LaAlO3 / SrTiO3 interface. Furthermore, we demonstrate that the amplitude of the emitted THz pulses can be tuned by electrostatic gating. Our findings extend ultrafast spin-charge conversion to oxides-based systems, thus providing a crucial link between ultrafast spintronics and correlated phenomena in complex oxides.

Presenters

  • Qi Zhang

    Argonne Natl Lab

Authors

  • Qi Zhang

    Argonne Natl Lab

  • Deshun Hong

    Argonne Natl Lab, Materials Science Division, Argonne National Laboratory, Material Science Division, Argonne National Laboratory

  • Changjiang Liu

    Materials Science Division, Argonne National Laboratory, Argonne Natl Lab

  • Richard Schaller

    Argonne, Argonne Natl Lab

  • Dillon Fong

    Argonne Natl Lab

  • Anand Bhattacharya

    Argonne National Lab, Materials Science Division, Argonne National Laboratory, Argonne Natl Lab, Material Science Division, Argonne National Laboratory, ANL

  • Haidan Wen

    Argonne National Laboratory, Argonne Natl Lab, Advanced Photon Source, Argonne National Laboratory