Gate-tunable THz emission at oxide interfaces via ultrafast spin-to-charge current conversion
ORAL
Abstract
Two-dimensional electron systems at oxide interfaces such as LaAlO3 / SrTiO3 provide promising platforms for achieving fast, tunable, and efficient spin-charge inter-conversion. Here, we report gate-tunable, ultrafast spin-to-charge current conversion in NiFe / LaAlO3 / SrTiO3, measured by THz emission spectroscopy. Upon ultrafast laser excitation, we found the sign of the emitted single-cycle THz pulses follows the direction of the magnetization in NiFe, and its magnitude decreases with increasing the thickness of the LaAlO3 layer. These findings support that the spin-charge conversion occurs at the LaAlO3 / SrTiO3 interface. Furthermore, we demonstrate that the amplitude of the emitted THz pulses can be tuned by electrostatic gating. Our findings extend ultrafast spin-charge conversion to oxides-based systems, thus providing a crucial link between ultrafast spintronics and correlated phenomena in complex oxides.
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Presenters
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Qi Zhang
Argonne Natl Lab
Authors
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Qi Zhang
Argonne Natl Lab
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Deshun Hong
Argonne Natl Lab, Materials Science Division, Argonne National Laboratory, Material Science Division, Argonne National Laboratory
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Changjiang Liu
Materials Science Division, Argonne National Laboratory, Argonne Natl Lab
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Richard Schaller
Argonne, Argonne Natl Lab
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Dillon Fong
Argonne Natl Lab
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Anand Bhattacharya
Argonne National Lab, Materials Science Division, Argonne National Laboratory, Argonne Natl Lab, Material Science Division, Argonne National Laboratory, ANL
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Haidan Wen
Argonne National Laboratory, Argonne Natl Lab, Advanced Photon Source, Argonne National Laboratory