Dissimilar Materials Epitaxy: Metallic Compound/III-V Semiconductor Heterostructures

COFFEE_KLATCH · Invited

Abstract

The ability to integrate dissimilar materials with different crystal structures and properties enables heterostructures to be developed with new functionality. Lattice matching, interfacial bonding and reactions are issues that need to be addressed for heteroepitaxial growth of dissimilar materials. Molecular beam epitaxial (MBE) growth, in combination with in-situ and ex-situ atomic level characterization techniques, enables studies of nucleation and epitaxial growth processes and interfacial reactions. We have investigated the growth of a number of dissimilar epitaxial materials on III-V semiconductors and metal oxides including elemental ferromagnets and superconductors, ferromagnetic and half metal Full-Heusler compounds (Co$_{2}$ MnSi, Co$_{2}$ FeSi,..), semiconducting (CoTiSb, NiTiSn,..) and topological Half-Heusler compounds (PtLuSb), and rare earth monopnictide-III- V semiconductor nanocomposites. These studies have aimed at tailoring of interfacial and material properties of these dissimilar materials heterostructures for targeting novel applications including spintronics and topological quantum computing.

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Authors

  • Chris Palmstrom

    University of California Santa Barbara, Materials Department, California NanoSystems Institute, Electrical and Computer Engineering, University of California, University of California-Santa Barbara, California Nanosystems Institute, Dept. of Electrical and Computer Engineering, and Dept. of Materials, Univ of California - Santa Barbara, University of California - Santa Barbara, Electronics & Computer Enginneering, University of California Santa Barbara, Materials Department, University of California, Santa Barbara, Materials, University of California Santa Barbara, Univ of California - Santa Barbara