Transport Properties in Graphene with Antidot Lattice

Magneto transport properties of CVD monolayer graphene with antidot lattice have been studied up to 32 Tesla with temperature from 200 mK to 50 K. Weak localization and prominent Shubnikov-de Haas oscillations are observed. The antidot lattice with different radii from 50 nm to 200 nm has great impact on effective mass of electron, carrier density and SdH effect. With increasing antidot radius, the amplitude of SdH oscillation becomes stronger. From the temperature dependent SdH oscillation and Dingle plot, the effective mass of electron is estimated and it decreases with increasing antidot radius. The lattice with 50 nm radius antidots opens a ~10 meV band gap on graphene. Geometric manipulation is an effective way to control electric properties of graphene.