Symmetric-Gapped Surface States of Fractional Topological Insulators
ORAL
Abstract
We construct the symmetric-gapped surface states of a fractional topological insulator with electromagnetic θ-angle θem = π/3 and a discrete Z3 gauge field. They are the proper generalizations of the T-pfaffian state and pfaffian/anti-semion state and feature an extended periodicity compared with their of “integer” topological band insulators counterparts. We demonstrate that the surface states have the correct anomalies associated with time-reversal symmetry and charge conservation.
–
Presenters
-
Gil Young Cho
School of Physics, Korea Institute for Advanced Study, Korea Advanced Institute of Science and Technology
Authors
-
Gil Young Cho
School of Physics, Korea Institute for Advanced Study, Korea Advanced Institute of Science and Technology
-
Jeffrey Teo
Physics Department, University of Virginia
-
Eduardo Fradkin
Physics, University of Illinois, Physics, Univ of Illinois - Urbana, Physics Department, University of Illinois at Urbana-Champaign