Phase transitions at filling ν = 5/2 in ZnO heterostructures

ORAL

Abstract

Half-filled Landau levels (LL) elicit competing phases which intimately depend on the nature of inter-particle interaction effects. The competition between emergent Fermi-surfaces, the fractional quantum Hall (FQH) effect and broken symmetry nematic ground states is now well documented. Here we report a complex cascade of phases which exist at filling ν = 5/2 in high mobility ZnO heterostructures and the ability to tune between them by selectively enhancing the Zeeman energy through sample rotation. We are able to induce a series of phase transitions between an incompressible FQH state, a compressible ground state, an anisotropic nematic state and an isotropic insulating state. These occur in the vicinity of the coincidence of the N = 1 and 0 LL as electrons are transferred between opposing spin branches. The even denominator FQH incompressibility only occurs when significant population of N = 1 exists, reinforcing the role of the orbital character of carriers for the development of this ground state. The anisotropic transport shows B-field sweep direction dependent hysteresis, suggesting the underlying nematic texture may be from magnetic domains of electrons of differing spin and orbital character close to the level crossing.

Presenters

  • Joseph Falson

    Max Planck Institute for Solid State Research

Authors

  • Joseph Falson

    Max Planck Institute for Solid State Research

  • Daniela Tabrea

    Max Planck Institute for Solid State Research

  • ding zhang

    Department of Physics, Tsinghua University, Max Planck Institute for Solid State Research

  • Inti Sodemann

    Physics, Massachusetts Inst of Tech-MIT, Max Planck Insitute for the Physics of Complex Systems

  • Yusuke Kozuka

    Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), Univ. of Tokyo, Applied Physics, University of Tokyo

  • Atsushi Tsukazaki

    Institute for Materials Reaserch, Tohoku University, Tohoku Univ, Institute for Materials Research, Tohoku University, IMR, Tohoku University, Institute for Materials Research, Tohoku University, Tohoku Univ.

  • Masashi Kawasaki

    Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Univ of Tokyo, The University of Tokyo, Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), Univ. of Tokyo, Applied Physics, University of Tokyo, Department of Applied Physics, The University of Tokyo, Department of Applied Physics, University of Tokyo

  • Jurgen Smet

    Max Planck Institute for Solid State Research, Max Planck Insitute for Solid State Research