Topological states on grain boundary of 1T’-MoTe2

ORAL

Abstract

We show that on a transition metal dichalcogenides 1T’ MoTe2 two types of grain boundaries can exist and that electronic states associated with themselves strongly depend on their crystal symmetries as well as topological index. Using first-principles computational methods and model Hamiltonian analysis, we investigate their structural stabilities and electronic structures. We clearly demonstrate that one-dimensional metallic state along one of the grain boundaries is a topologically protected state. The spatial symmetries created by grain boundaries is also shown to play an important role in characterizing the protected metallic states.

Presenters

  • Seoung-Hun Kang

    Korea Inst for Advanced Study, Korea Institute for Advanced Study

Authors

  • Seoung-Hun Kang

    Korea Inst for Advanced Study, Korea Institute for Advanced Study

  • Hyun-Jung Kim

    Korea Inst for Advanced Study, Korea Institute for Advanced Study

  • Kisung Chae

    Korea Inst for Advanced Study, Korea Institute for Advanced Study

  • Wonhee Ko

    Samsung Advanced Institute of Technology, Oak Ridge National Lab

  • Suyeon Cho

    Ewha Womans University, Ewha womans university, Institute for Basic Science (IBS), Sungkyunkwan University, Chemical engineering & Materials science, Ehwa university

  • Heejun Yang

    Center for Integrated Nanostructure Physics, Department of Energy Science, Sungkyunkwan University, Energy Science, Sungkyunkwan Univ, Energy science, Sungkyunkwan Univ

  • Sung Wng Kim

    Department of Energy Science, Sungkyunkwan University

  • Seongjun Park

    Samsung Advanced Institute of Technology

  • Sungwoo Hwang

    Samsung Advanced Institute of Technology

  • Young-Kyun Kwon

    Kyung Hee University, Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Department of Physics, Kyung Hee University

  • Young-Woo Son

    Korea Institute for Advanced Study, Korea Inst for Advanced Study

  • Hyo Won Kim

    Samsung Advanced Institute of Technology