First-principles designs of Two-dimensional Ferroelectrics/Multiferroics

Despite the past research on the diluted magnetic semiconductors and two-dimensional (2D) ferromagnetism, their potential applications are still hindered by their low Curie temperature, especially for the downscaling integrated circuit size close to nanoscale. Their bottlenecks have stimulated our research on 2D ferroelectrics/multiferroics that may combine semiconducting properties with non-volatile memories at nanoscale and ambient conditions and enable a wide range of applications. Here we will present a series of our predictions on 2D ferroelectrics/multiferroics starting from 2013, revealing that FE can be much more robust than FM in 2D with above room-temperature T_c and can also be integrated into semiconductor circuits. The couplings between different ferroics in 2D are also revealed, which can even be much more efficient than traditional multiferroics for data reading and writing.
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