Localization effects in 3D Dirac antiperovskite thin films

ORAL

Abstract

We report localization effects in the low temperature magnetotransport of 3D Dirac materials Sr3PbO and Sr3SnO. Robust weak antilocalization was observed for Sr3SnO, whereas weak localization was dominant for Sr3PbO. The sign change of quantum interference part of the magnetoconductance is related to the position of the Fermi energy with respect to the Dirac nodes, pointing to the role of Berry curvature. Detailed properties of Dirac electrons derived by localization analysis will be discussed.

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Presenters

  • Hiroyuki Nakamura

    Max Planck Institute for Solid State Research

Authors

  • Hiroyuki Nakamura

    Max Planck Institute for Solid State Research

  • Johannes Merz

    Max Planck Institute for Solid State Research

  • Eslam Khalaf

    Max Planck Institute for Solid State Research

  • Pavel Ostrovsky

    Max Planck Institute for Solid State Research

  • Debakanta Samal

    Institute of Physics

  • Hidenori Takagi

    University of Tokyo, Max Planck Institute for Solid State Research