Incorporating Magnetic Resonance Into a Wafer Probing Station

We have incorporated very high sensitivity electrically detected magnetic resonance (EDMR) detection in a wafer probing station. We believe this development may be of significant utility because the family of electron paramagnetic resonance (EPR) has unrivaled analytical power in the identification of point defects in semiconductors and insulators. EDMR has all of the analytical power of conventional EPR, plus enormously enhanced sensitivity, allowing measurements to be made on near nanoscale devices. It also has the capability to be exclusively sensitive to only those point defects which directly affect the performance of solid state devices such as: metal oxide semiconductor field effect transistors (MOSFETs), bipolar junction transistors, p-n junctions, and many other devices. Wafer-Level EDMR (WLEDMR) allows for resonance based measurements on a wide variety of devices in fully processed wafers with high sensitivity. This sensitivity allows for, what is to the best of our knowledge, the first demonstration of spatially resolved EDMR across the surface of a MOSFET.