The analyses of multi optical method on the structural evolution of B implanted ultra-shallow layers

Ion implantation technology plays an important role in next generation Si-based devices. We provide multi optical method, including UV Raman, X-ray photoemission spectroscopy (XPS), X-ray Absorption Near Edge Structure (XANES), reflective second harmonic generation (RSHG) to inspect the structural evolution of B-implanted ultra-shallow layers (USL) in a quantification way rather than the traditional measurement such as thermal wave and sheet resistance measurement which have exploring depth of several micrometers. According to XPS spectra, the B-B bond disappeared at the optima condition of beam current, which strongly agreed with the results of UV Raman that exhibited the most effective Si-B bond at the same condition. The results reveal the influence of beam current on the implantation process. Besides, the quality distinguish between ultra-low energy B implantation on room-temperature substrate (R) and cold-temperature substrate (C) samples via nano-second laser annealing were analyzed by multi optical method. The homogeneous amorphous layer, well-restructure and stable chemical states after laser annealing were observed on C samples. This optical method open a window to monitor further USL.