2D Materials - Heterostructures III

FOCUS · E36

Presentations

  • Probing Valley Dynamics in van der Waals heterostructures

    Invited

    –

    Presenters

    • Feng Wang

      Physics, Univ of California - Berkeley, University of California, Berkeley, Univ of California - Berkeley, University of California at Berkeley, UC Berkeley and LBNL

    Authors

    • Feng Wang

      Physics, Univ of California - Berkeley, University of California, Berkeley, Univ of California - Berkeley, University of California at Berkeley, UC Berkeley and LBNL

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  • Temperature dependence of charge transfer processes in WS2/MoSe2 heterobilayers probed by ultrafast spectroscopy

    ORAL

    –

    Presenters

    • Ouri Karni

      Stanford University, Applied Physics, Stanford University

    Authors

    • Ouri Karni

      Stanford University, Applied Physics, Stanford University

    • Kirby Smithe

      Electrical Engineering, Stanford University

    • Connor McClellan

      Electrical Engineering, Stanford University

    • Connor Bailey

      Electrical Engineering, Stanford University

    • Eric Pop

      Electrical Engineering, Stanford University, Stanford University, Department of Electrical Engineering, Department of Materials Science & Engineering, Precourt Institute for Energy, Stanford University

    • Tony Heinz

      Ginzton Lab, Stanford University, Stanford Univ, Applied Physics, Stanford University

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  • Generation, Transport and Imaging of Pure Valley Currents in van der Waals Heterostructures

    ORAL

    –

    Presenters

    • Chenhao Jin

      Univ of California - Berkeley, University of California at Berkeley

    Authors

    • Chenhao Jin

      Univ of California - Berkeley, University of California at Berkeley

    • Jonghwan Kim

      University of California at Berkeley

    • Iqbal Utama

      Physics, Univ of California - Berkeley, University of California at Berkeley, Univ of California - Berkeley, University of California, Berkeley

    • Emma Regan

      University of California at Berkeley

    • Hans Kleemann

      University of California at Berkeley, Technische Universität Dresden

    • Hui Cai

      Arizona State University

    • Yuxia Shen

      Arizona State University

    • Matthew Shinner

      University of California at Berkeley

    • ARJUN SENGUPTA

      University of California at Berkeley

    • Kenji Watanabe

      National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Advanced materials laboratory, National institute for Materials Science, NIMS-Japan

    • Takashi Taniguchi

      National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, NIMS-Japan

    • Sefaattin Tongay

      Materials Science and Engineering, Arizona State University, Arizona State University

    • Alex Zettl

      UC Berkeley and LBNL, UC berkeley, Univ of California - Berkeley, Physics, UC Berkeley, Physics, University of California, Berkeley, University of California at Berkeley, Physics, University of California - Berkeley, Department of Physics, Univ of California - Berkeley

    • Feng Wang

      Physics, Univ of California - Berkeley, University of California, Berkeley, Univ of California - Berkeley, University of California at Berkeley, UC Berkeley and LBNL

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  • Quantum-Confined States and Band Shifts Arising from Moiré Patterns in MoS<sub>2</sub>-WSe<sub>2</sub> Heterojunctions

    ORAL

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    Presenters

    • Dacen Waters

      Physics, Carnegie Mellon Univ

    Authors

    • Dacen Waters

      Physics, Carnegie Mellon Univ

    • Yi Pan

      Paul-Drude-Institut für Festkörperelektronik

    • Stefan Fölsch

      Paul-Drude-Institut für Festkörperelektronik

    • Yifan Nie

      Materials Science and Engineering, University of Texas at Dallas

    • Yu-Chuan Lin

      Materials Science and Engineering, and Center for 2-Dimensional and Layered Materials, Pennsylvania State University

    • Bhakti Jariwala

      Materials Science and Engineering, and Center for 2-Dimensional and Layered Materials, Pennsylvania State University

    • Kehao Zhang

      Materials Science and Engineering, and Center for 2-Dimensional and Layered Materials, Pennsylvania State University

    • Kyeongjae Cho

      Materials science and engineering, University of Texas at Dallas, Materials Science and Engineering, University of Texas at Dallas

    • Joshua Robinson

      Materials Science and Engineering, and Center for 2-Dimensional and Layered Materials, Pennsylvania State University

    • Randall Feenstra

      Physics, Carnegie Mellon Univ

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  • Interlayer Exciton Traps in Van der Waals Heterostructures

    ORAL

    –

    Presenters

    • Andrew Joe

      Physics, Harvard University, Harvard University

    Authors

    • Andrew Joe

      Physics, Harvard University, Harvard University

    • Luis Jauregui

      Department of Physics, Harvard University, Harvard Univ, Physics, Harvard University, Harvard University

    • Kateryna Pistunova

      Department of Physics, Harvard University, Physics, Harvard University, Harvard Univ, Harvard University

    • Alexander High

      Institute for Molecular Engineering, University of Chicago, Physics, Harvard University, Harvard University, The Institute for Molecular Engineering, University of Chicago

    • You Zhou

      Harvard Univ, Physics, Harvard University, Physics, Chemistry and Chemical Biology, Harvard University, Harvard University

    • Giovanni Scuri

      Harvard Univ, Physics, Harvard University, Harvard University

    • Kristiaan De Greve

      Harvard Univ, Physics, Harvard University, Harvard University

    • Dominik Wild

      Harvard Univ, Physics, Harvard University, Harvard University

    • Eshaan Patheria

      Department of Physics, Harvard University, Harvard University, Physics, Harvard University

    • Mikhail Lukin

      Harvard University, Physics, Harvard Univ, Harvard Univ, Department of Physics, Harvard University, Physics, Harvard University

    • Hongkun Park

      Harvard Univ, Physics, Harvard University, Physics, Chemistry and Chemical Biology, Harvard University, Harvard University, Chemistry and Physics, Harvard University

    • Philip Kim

      Physics, Harvard University, Harvard University, Department of Physics, Harvard University, Harvard Univ, Physics, Harvard, Department of Physics, Harvard university, School of Applied Sciences and Engineering, Harvard University

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  • First-Principles Studies of Charge and Spin Transport in 2D MoS<sub>2</sub> Junctions

    ORAL

    –

    Presenters

    • Adam Bruce

      University of Florida

    Authors

    • Adam Bruce

      University of Florida

    • Shuanglong Liu

      University of Florida

    • Yun-Peng Wang

      University of Florida, Vanderbilt University, Department of Physics and QTP, University of Florida

    • Hai-Ping Cheng

      University of Florida, Department of Physics, University of Florida, Department of Physics and Quantum Theory Project, Univ of Florida - Gainesville, Department of Physics and QTP, University of Florida

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  • Data-driven Discovery of New Two- and One-dimensional Materials and Lattice-commensurate Heterostructures

    ORAL

    –

    Presenters

    • Gowoon Cheon

      Stanford University, Stanford Univ

    Authors

    • Gowoon Cheon

      Stanford University, Stanford Univ

    • Karel-Alexander N. Duerloo

      Boston Consulting Group, Stanford Univ

    • Austin Sendek

      Stanford University, Stanford Univ

    • Chase Porter

      Stanford University

    • Yuan Chen

      Department of Applied Physics, Stanford University, Stanford University

    • Evan Reed

      Stanford University, Stanford Univ, Materials Sciences and Engineering, Stanford

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  • Bilayer Graphene - WSe<sub>2</sub> Resonant Tunneling Heterostructures With Large Current Densities

    ORAL

    –

    Presenters

    • Gregory Burg

      The University of Texas at Austin, Department of Electrical and Computer Engineering, The University of Texas at Austin, Electrical and Computer Engineering, The University of Texas at Austin

    Authors

    • Gregory Burg

      The University of Texas at Austin, Department of Electrical and Computer Engineering, The University of Texas at Austin, Electrical and Computer Engineering, The University of Texas at Austin

    • Nitin Prasad

      Electrical and Computer Engineering, The University of Texas at Austin

    • Babak Fallahazad

      Univ of Texas, Austin, Electrical and Computer Engineering, The University of Texas at Austin

    • Kyounghwan Kim

      The University of Texas at Austin, Univ of Texas, Austin, Electrical and Computer Engineering, The University of Texas at Austin

    • Leonard Register

      The University of Texas at Austin, Electrical and Computer Engineering, The University of Texas at Austin

    • Emanuel Tutuc

      The University of Texas at Austin, Department of Electrical and Computer Engineering, The University of Texas at Austin, Univ of Texas, Austin, Electrical and Computer Engineering, The University of Texas at Austin

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  • High-Performance WSe<sub>2</sub> Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

    ORAL

    –

    Presenters

    • Anyi Zhang

      Department of Chemical Engineering, University of Southern California, Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Univ of Southern California

    Authors

    • Bilu Liu

      Ming Hsieh Department of Electrical Engineering, University of Southern California, Univ of Southern California

    • Yuqiang Ma

      Ming Hsieh Department of Electrical Engineering, University of Southern California, Univ of Southern California

    • Anyi Zhang

      Department of Chemical Engineering, University of Southern California, Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Univ of Southern California

    • Liang Chen

      Department of Electrical Engineering, University of Southern California, Ming Hsieh Department of Electrical Engineering, University of Southern California, Univ of Southern California

    • Ahmad Abbass

      Ming Hsieh Department of Electrical Engineering, University of Southern California, Univ of Southern California

    • Yihang Liu

      Ming Hsieh Department of Electrical Engineering, University of Southern California, Univ of Southern California

    • Chenfei Shen

      Univ of Southern California, Mork Family Department of Chemical Engineering and Materials Science, Univeristy of Southern California, Mork Family Department of Chemical Engineering and Materials Science, University of Southern California

    • Haochuan Wan

      Univ of Southern California

    • Chongwu Zhou

      Department of Electrical Engineering, University of Southern California, Ming Hsieh Department of Electrical Engineering, University of Southern California, Univ of Southern California, Mork Family Department of Chemical Engineering and Materials Science & Ming Hsieh Department of Electrical Engineering, University of Southern California

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  • Multi-junction lateral 2D heterostructures of transition metal dichalcogenides via sequential edge epitaxy<i> </i>

    ORAL

    –

    Presenters

    • Humberto Gutierrez

      Physics, University of South Florida, University of South Florida, Physics, University of South Florida-Tampa

    Authors

    • Prasana Sahoo

      Physics, University of South Florida, Physics, University of South Florida-Tampa

    • Shahriar Memaran

      Natl High Magnetic Field Lab, Nat. High Magn. Field Lab., Florida State University

    • Yan Xin

      Nat. High Magn. Field Lab., Florida State University

    • Luis Balicas

      Natl High Magnetic Field Lab, Nat. High Magn. Field Lab., Florida State University, FSU-NHMFL, National High Magnetic Field Lab, National High Magnetic Field Laboratory, Natl. High Magnetic Field Lab, Florida State University, High Field Magnet Lab, 1800 E. Paul Dirac Drive, National High Magnetic Field Laboratory, Natl High Magnetic Field Lab

    • Humberto Gutierrez

      Physics, University of South Florida, University of South Florida, Physics, University of South Florida-Tampa

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  • Two-Dimensional MoS<sub>2</sub> Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts

    ORAL

    –

    Presenters

    • Seung Su Baik

      School of Computational Sciences, Korea Inst for Advanced Study, Korea Institute for Advanced Study

    Authors

    • Seung Su Baik

      School of Computational Sciences, Korea Inst for Advanced Study, Korea Institute for Advanced Study

    • Seongil Im

      Dept. of Physics, Yonsei University, Institute of Physics and Applied Physics, Yonsei University

    • Hyoung Joon Choi

      Physics, Yonsei University, Department of Physics and Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Physics, Yonsei Univ., Dept. of Physics, Yonsei University, Department of Physics, Yonsei University, Department of Physics, Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Institute of Physics and Applied Physics, Yonsei University, Department of Physics, and Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University

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  • Stability and Electronic Properties of Hybrid SnO Bilayers: SnO/Graphene and SnO/BN

    ORAL

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    Presenters

    • Qing Guo

      Department of Physics, Michigan Technological Univ

    Authors

    • Qing Guo

      Department of Physics, Michigan Technological Univ

    • Gaoxue Wang

      Department of Physics, Michigan Technological Univ

    • Ashok Kumar

      Centre for Physical Sciences, Central University of Punjab

    • Ravindra Pandey

      Physics, Michigan Technological University, Department of Physics, Michigan Technological Univ

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