Quantum Transport in Gapped Bilayer Graphene in the Presence of Long-Range Disorder

In this work, we study the electron transport of gapped bilayer graphene in the presence of the long-range disorder due to charge impurities. For each disorder realization we obtain the spatial carrier density profile of the ground state using a generalization of the Thomas-Fermi theory and then the conductance via a fully quantum mechanical approach. By considering several disorder realizations we obtain disorder-averaged results. We find that the disorder-induced carrier density inhomogeneties strongly affect the nature of the electronic transport. In addition, we find that the quantum mechanical treatment of the scattering problem leads to results that in some cases are qualitatively different from the results obtained via a semiclassical approach.