Electrical control of single photon emitter in layered hexagonal boron nitride

Photons are attractive as quantum information carriers due to their ultra-long coherence time, extremely low propagation loss, light-speed transmission, easy manipulation and low noise. A central building block for photonic quantum system is single-photon emitters (SPEs). The atomic defect in layered hexagonal boron nitride (hBN) was recently discovered to be an ultra-bright, stable SPE with small phonon side bands. Here we report the study of electrical control of single photon emitter in layered hexagonal boron nitride. The demonstrated efficient control will enable interesting quantum information applications and promise unprecedented computation capability and communication security.