Achieving high fidelity single qubit gates in strongly driven silicon quantum dot qubits

Performing qubit gate operations as quickly as possible can be important for minimizing the effects of decoherence. For resonant gating, this requires applying a strong ac drive. However, strong driving can present control challenges by causing leakage as well as theoretical challenges because the rotating-wave approximation can break down. Here we analyze resonant X rotations of silicon quantum double dot hybrid and charge qubits in the presence of 1/f charge noise, typical for semiconducting devices. We obtain analytical formulas for optimal driving parameters, as well as the system evolution. We show that, by exploiting strong driving, gate fidelities in both qubits can be above 99.9%.

This work has been supported in part by ARO (W911NF-12-0607, W911NF-17-1-02747), NSF (PHY-1104660), the University of Wisconsin-Madison, and the Vannevar Bush Faculty Fellowship program sponsored by the Basic Research Office of the Assistant Secretary of Defense for Research and Engineering and funded by the Office of Naval Research through grant N00014-15-1-0029. The views and conclusions contained in this work are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Army Research Office (ARO), or the U.S. Government.