Electronic Structure of Bi_2-xPb_xSr₂CaCu₂O_8+δSuperconductors with Various Pb Concentrations Measured by Laser-Based ARPES

The Bi2Sr2CaCu2O8+δ(Bi2212) high temperature superconductors have been extensively studied by angle-resolved photoemission spectroscopy (ARPES). However, the Bi2212 system suffers from two main shortcomings：one is the difficulty in obtaining heavily over-doped samples; the other is the complications of the measured electronic structure caused by superstructure bands, particularly near the anti-nodal region. We will present our results on single crystal growth and ARPES measurement on Pb-doped Bi2212 with various Pb concentrations in order to address the above problems. High quality single crystals of Bi2-xPbxSr2CaCu2O8+δwith wide Pb range (x=0~0.8) have been successfully grown by the traveling solvent floating zone technique. Their electronic structure is measured by our new generation laser-based ARPES system based on the angle-resolved Time-of-Flight (ARToF) electron energy analyzer. The effect of Pb-doping on the electronic structure of Bi2212 will be presented.